The M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory features 70ns access time, 10µs per Byte/Word typical program time, support Fast Program (optional) VPP = 12V, support 8Mbit+24Mbit dual bank memory array, support top or bottom location parameter blocks, support read in one bank while program or erase in other, support erase suspend and resume modes, support read and program another block during erase suspend, support bypass program command unlock, support VPP/WP pin for FAST PROGRAM and WRITE PROTECT, support temporary block unprotection mode, support 64 bit security code, support extended memory block, support low power consumption, support standby and automatic standby, support 100,000 program/erase cycles per block, and support electronic signature (manufacturer code: 0020h, top device code M29DW323DT: 225Eh, bottom device code M29DW323DB: 225Fh).
The M29DW323DT and M29DW323DB are 32 Mbit (4 Mb × 8 or 2 Mb × 16) non‑volatile flash memory devices supplied at 3 V. They are offered in two compact packages: TSOP48 (12 × 20 mm) and TFBGA48 (6 × 8 mm). The devices support a wide supply voltage range of 2.7 V to 3.6 V for normal operation and an optional 12 V Vpp for fast programming.
Key features include dual‑bank operation that allows simultaneous read from one bank while programming or erasing the other, block‑level protection, an unlock‑bypass program command for high‑speed batch programming, and a 64‑bit security code area. Each memory block is rated for 100 000 program/erase cycles and the device provides low‑power standby modes.
| Supply Voltage (Voc) | 2.7 V to 3.6 V |
|---|---|
| Fast‑Program Voltage (Vpp) | 12 V (optional) |
| Access Time | 70 ns |
| Typical Programming Time | 10 µs per Byte/Word |
| Program/Erase Endurance | 100 000 cycles per block |
| Memory Capacity | 32 Mbit (4 Mb × 8 or 2 Mb × 16) |
The device operates with a supply voltage (Voc) from 2.7 V to 3.6 V.
Each block is rated for 100 000 program/erase cycles.
Typical programming time is 10 µs per byte or word.