The M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory features 70ns access time, 10µs per Byte/Word typical program time, support Fast Program (optional) VPP = 12V, support 8Mbit+24Mbit dual bank memory array, support top or bottom location parameter blocks, support read in one bank while program or erase in other, support erase suspend and resume modes, support read and program another block during erase suspend, support bypass program command unlock, support VPP/WP pin for FAST PROGRAM and WRITE PROTECT, support temporary block unprotection mode, support 64 bit security code, support extended memory block, support low power consumption, support standby and automatic standby, support 100,000 program/erase cycles per block, and support electronic signature (manufacturer code: 0020h, top device code M29DW323DT: 225Eh, bottom device code M29DW323DB: 225Fh).