NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories are high density NAND flash memories, with up to 1 Gbit memory array, up to 32 Mbit spare area, cost effective solutions for mass storage applications.
The NAND128‑A, NAND256‑A, NAND512‑A and NAND1G‑A family are high‑density SLC NAND flash memories ranging from 128 Mbit to 1 Gbit. They operate with either a 1.8 V or 3.0 V supply and provide a small‑page architecture of 528 Bytes (x8) or 264 Words (x16) per page.
Key features include multiplexed address/data lines, pin‑compatible packages, up to 100 000 program/erase cycles, 10‑year data retention, and optional chip‑enable "don't care" and serial‑number options. The devices are RoHS‑compliant and supported by development tools such as ECC software and hardware simulation models.
| Memory densities | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit |
|---|---|
| Supply voltage (1.8 V device) | Vpp = 1.7‑1.95 V |
| Supply voltage (3.0 V device) | Vpp = 2.7‑3.6 V |
| Page size (x8 device) | 528 Bytes (512 + 16 spare) |
| Page size (x16 device) | 264 Words (256 + 8 spare) |
| Block size (x8 device) | 16 KB + 512 B spare |
| Block size (x16 device) | 8 KB + 256 Words spare |
| Typical page program time | 200 µs |
| Typical block erase time | 2 ms |
| Endurance cycles | 100 000 program/erase cycles |
| Data retention | 10 years |
| RoHS compliance | Lead‑free components |
Both 1.8 V (Vpp = 1.7‑1.95 V) and 3.0 V (Vpp = 2.7‑3.6 V) versions are available.
The NAND flash memories are rated for up to 100 000 program/erase cycles.
x8 devices have a 528‑Byte page (512 + 16 spare); x16 devices have a 264‑Word page (256 + 8 spare).
Block erase typically takes about 2 ms.