M29W200BT/M29W200BB is 2Mbit low voltage single supply flash memory, single power supply range is 2.7-3.6V, read timing is 55ns, program time is 10µs/byte, supports 7 memory blocks, including 1 boot block (top or bottom location), 2 parameter blocks and 4 main blocks, supports embedded byte/word program algorithm, embedded multi-block/chip erase algorithm, status register polling and toggle bits, ready/busy output pin, supports erase suspend and resume mode, unlock bypass program command, temporary block unlock mode, low power consumption (standby and automatic standby), 100,000 program/erase cycles/block, 20 years data retention (defect rate is less than 1ppm/year), electronic signature (manufacturer code: 0020h, top device code M29W200BT: 0051h, bottom device code M29W200BB 0057h), supports TSOP48(N) and SO44(M) packages.
This handbook describes the M29W200BT and M29W200BB 2 Mbit flash memory devices, which operate from a single low‑voltage supply (2.7 V to 3.6 V). It covers electrical characteristics such as access time, programming time, endurance, and temperature ranges, and lists the available TSOP48 and SO44 packages.
The document explains the pin assignments, signal functions, and the five standard bus operations (Read, Write, Output Disable, Standby, Automatic Standby). It also details special bus operations, the command interface, and programming sequences including Unlock Bypass and block protection features.
| Supply Voltage | 2.7 V to 3.6 V |
|---|---|
| Access Time | 55 ns |
| Programming Time | 10 µs per Byte/Word (typical) |
| Program/Erase Cycles | 100,000 cycles |
| Data Retention | 20 years |
| Ambient Operating Temperature (Option 1) | 0 °C to 70 °C |
| Package Types | TSOP48 (12 × 20 mm) and SO44 |
The devices operate from a single supply voltage of 2.7 V to 3.6 V.
The access time is specified as 55 ns.
The memory is rated for 100,000 program/erase cycles.
Data is retained for 20 years under specified conditions.