M29W160ET M29W160EB is a 16Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V supply flash memory with a voltage range of 2.7V to 3.6V for program, erase and read. This product has 70, 90ns of access time, 10µs of programming time, 35 memory blocks, 1 boot block (top or bottom location) - 2 parameters and 32 main blocks. Its program/erase controller has embedded byte/word programming algorithms, erase suspend and resume modes allow reading and programming another block, and erase suspend time also supports bypass programming commands for faster production/batch programming. In addition, the product also supports temporary block non-protection mode, 64-bit security code, low power consumption (standby and automatic standby) and 100,000 programming/erase cycles/block. The electronic signature includes the manufacturer code (0020h), top device code (M29W160ET: 22C4h) and bottom device code (M29W160EB: 2249h). The product supports TSOP48 (N) and TFBGA48 (ZA) two packages.
The M29W160ET and M29W160EB are 16 Mbit (2 Mb × 8 or 1 Mb × 16) non‑volatile flash memories that operate from a single 3 V supply. They provide 35 memory blocks, including a boot block, two parameter blocks and 32 main blocks, and support 100 000 program/erase cycles per block.
The devices are offered in TSOP48 (12 × 20 mm) and TFBGA48 (6 × 8 mm) packages and feature low‑power standby modes, erase‑suspend/resume, and a 64‑bit security code interface. The datasheet includes pin descriptions, command sets, timing diagrams, mechanical data and block‑address tables for both 8‑bit and 16‑bit organizations.
| Supply Voltage | 2.7 V to 3.6 V |
|---|---|
| Access Times | 70 ns, 90 ns |
| Programming Time | 10 µs per Byte/Word (typical) |
| Memory Size | 16 Mbit (2 Mb × 8 or 1 Mb × 16) |
| Memory Blocks | 35 blocks (1 boot, 2 parameter, 32 main) |
| Endurance | 100 000 program/erase cycles per block |
| Low Power Modes | Standby and Automatic Standby |
The device operates from 2.7 V to 3.6 V supply voltage.
Each memory block is rated for 100 000 program/erase cycles.
The device contains 35 memory blocks: 1 boot block, 2 parameter blocks, and 32 main blocks.