NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories are high density NAND flash memories with up to 1 Gbit memory array, up to 32 Mbit spare area, and cost effective solutions for mass storage applications.
The NAND128‑A, NAND256‑A, NAND512‑A and NANDO1G‑A families are small‑page SLC NAND flash memories offered by STMicroelectronics. They provide densities from 128 Mbit up to 1 Gbit, support x8 or x16 bus widths, and operate from either 1.8 V or 3 V supply voltages.
Key features include 528‑Byte (512 + 16 spare) or 264‑Word (256 + 8 spare) page sizes, up to 100 000 program/erase cycles, 10‑year data retention, and a range of package options such as TSOP48, USOP48, VFBGA55, TFBGA55, VFBGA63 and TFBGA63.
| Density | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit |
|---|---|
| Bus Width | x8 or x16 |
| Page Size | 528 Bytes (512 + 16 spare) for x8, 264 Words (256 + 8 spare) for x16 |
| Supply Voltage | 1.8 V (Vpp 1.7‑1.95 V) or 3.0 V (Vpp 2.7‑3.6 V) |
| Block Size | 16 KB + 512 B spare (x8) or 8 KB + 256 Words spare (x16) |
| Page Program Time | Typical 200 µs |
| Block Erase Time | Typical 2 ms |
| Endurance | 100 000 program/erase cycles |
| Data Retention | 10 years |
| RoHS Compliance | Lead‑free components |
The devices operate from either a 1.8 V supply (Vpp = 1.7‑1.95 V) or a 3.0 V supply (Vpp = 2.7‑3.6 V).
The x8 version has a 528‑Byte page (512 + 16 spare) and the x16 version has a 264‑Word page (256 + 8 spare).
Each device is rated for 100 000 program/erase cycles.