M29F102BB is a single-supply flash memory supporting 1Mbit (64Kb x16, boot block), with the following features: Single 5V ±10% supply voltage for program, erase and read operations; 35ns access time; 8µs program time per word typical; 5 memory blocks, 1 boot block (bottom location), 2 parameter and 2 main blocks; embedded word program algorithm, embedded multi-block/chip erase algorithm, status register polling and toggle bits; erase suspend and resume modes, read and program another block during erase suspend; unlock bypass program command, faster production/batch programming; temporary block unprotection mode; standby and automatic standby, each block supports 100,000 program/erase cycles; M28F102 compatible, pin-out and read mode; 20 years of data retention, defect rate below 1ppm/year; electronic signature, manufacturer code 0020h, bottom device code M29F102BB 0097h; compliant with lead-free soldering processes, lead-free versions.
The document describes the M29F102BB, a 1 Mbit (64Kb x16) non-volatile flash memory designed for operation with a single 5V supply. The device features an embedded program/erase controller that simplifies programming and erase operations, including support for block protection and temporary unprotection modes.
The datasheet provides detailed specifications for the PLCC44 and TSOP40 packages, including signal descriptions, bus operations, command interfaces, maximum ratings, DC and AC parameters, and mechanical package data. It also details the electronic signature codes used to identify the manufacturer and specific device variant.
| Memory Capacity | 1 Mbit (64Kb x16) |
|---|---|
| Supply Voltage | Single 5V+10% |
| Access Time | 35ns |
| Programming Time | 8us per Word typical |
| Data Retention | 20 Years |
| Endurance Cycles | 100,000 PROGRAM/ERASE CYCLES per BLOCK |
| Packages | PLCC44 and TSOP40 (10 x 14mm) |
| Manufacturer Code | 0020h |
The typical programming time is 8 microseconds per word.
Each block supports up to 100,000 program and erase cycles.
The device has an access time of 35 nanoseconds.