M29W641DH, M29W641DL, M29W641DU 64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory features include supply voltage, access time, program time, storage block, program/erase controller, erase suspend and resume modes, unlock bypass program command, write protection options, temporary block unprotection mode, common flash interface, extended memory block, low power consumption and electronic signature
The M29W641 series is a 64 Mbit (4 Mb × 16) non‑volatile flash memory offered in TSOP48 and TFBGA63 packages. It operates from a 2.7 V‑3.6 V core supply, a 1.8 V‑3.6 V I/O supply and optionally a 12 V Vpp for fast programming. The devices support independent block erase, write‑protect options, and include an extra 32 KWord extended block for security data.
The handbook provides detailed signal descriptions, command interface timing, electrical characteristics, package dimensions, block protection schemes and revision history. It is intended for hardware designers and firmware engineers integrating the M29W641 devices into their systems.
| Supply Voltage (Vcc) | 2.7 V to 3.6 V |
|---|---|
| I/O Supply Voltage (Vccq) | 1.8 V to 3.6 V |
| Programming Voltage (Vpp) | 12 V (optional) |
| Memory Capacity | 64 Mbit (4 Mb × 16) |
| Access Time | 70 ns, 90 ns, 100 ns, 120 ns |
| Typical Programming Time | 10 µs |
| Extended Block Size | 32 KWord |
The devices need a core supply (Vcc) of 2.7 V‑3.6 V, an I/O supply (Vccq) of 1.8 V‑3.6 V, and an optional 12 V Vpp for fast programming.
The memory uses 22 address inputs, labeled A0 through A21.