ST M58LW032A 32 Mbit (2Mb x16 Uniform Block Burst) 3V Supply Flash Memory handbook

M58LW032A 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory has a wide x16 data bus for high bandwidth. It features supply voltage of VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations; VDDQ = 1.8V to VDD for I/O Buffers. It supports synchronous/asynchronous read, namely synchronous burst read, asynchronous random read, asynchronous address latch controlled read and page read. Access time is synchronous burst read up to 56MHz; asynchronous page mode read 90/25ns and 110/25ns; random read 90ns, 110ns. It features 16 word write buffer and 18µs word effective programming time. It features 64 uniform 32 KWord memory blocks, block protection/unprotection, program and erase suspend, 128 bit protection register, common flash interface and 100,000 program/erase cycles/block. Electronic signature is manufacturer code: 0020h - Device code M58LW032A: 8816h. It has two packages, TSOP56 (N) 14 x 20 mm TBGA64 (ZA) 10 x 13 mm TBGA.


ST M58LW032A 32 Mbit (2Mb x16 Uniform Block Burst) 3V Supply Flash Memory handbook - cover page
Brand
STMicroelectronics
Category
Flash Memory
Document type
Datasheet
Language
English
Pages
61
File format
PDF
File size
419 KB
Published
06 June, 2012
Updated
01 October, 2023
Model
X16
MD5 checksum
B2BB3E2DEB5488B781B308E4C9F83F34

About this manual

The document describes the M58LW032A, a 32 Mbit (2Mb x16) non-volatile Flash memory designed for use with a single low voltage core supply of 2.7V to 3.6V. The device supports both synchronous and asynchronous read operations and includes features such as block protection, program/erase suspend/resume capabilities, and an on-chip controller.

What's inside

  • Summary Description
  • Synchronous Bus Operations
  • Asynchronous Bus Operations
  • Command Interface
  • Status Register
  • Maximum Rating
  • DC and AC Parameters
  • Package Mechanical
  • Part Numbering
  • Appendix A. Block Address Table

Specifications

Supply Voltage2.7 to 3.6V core supply voltage
I/O Buffers Supply Voltage1.8V to Vpp
Synchronous Burst Read Speedup to 56MHz
Asynchronous Page Mode Read Time90/25ns and 110/25ns
Random Read Time90ns, 110ns
Programming Buffer Size16 Word Write Buffer
Word Effective Programming Time181s
Memory Block Count64 UNIFORM 32 KWord MEMORY BLOCKS
Program/Erase Endurance100,000 PROGRAM/ERASE CYCLES per BLOCK
Protection Register Size128 bit PROTECTION REGISTER

Frequently asked questions

What is the core supply voltage range for this memory?

The device operates with a Vpp of 2.7 to 3.6V for Program, Erase and Read operations.

How many memory blocks does the M58LW032A contain?

The memory is divided into 64 uniform 32 KWord memory blocks.

What are the available package types for this device?

It is available in TSOP56 (14 x 20 mm) and TBGA64 (10 x 13mm, 1mm pitch) packages.

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