Key facts
- Brand
- STMicroelectronics
- Model
- M29F400B
- Category
- Other Electronics
- Industry
- Electronics
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-06
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ManualST M29F400BT M29F400BB 4 Mbit (512Kb x8 or 256Kb x16 Boot Block) Single Supply Flash Memory handbook
ST M29F400BT M29F400BB 4 Mbit (512Kb x8 or 256Kb x16 Boot Block) Single Supply Flash Memory handbook
M29F400BT, M29F400BB are 4Mbit (512Kb x 8 or 256Kb x 16, Boot Block) single supply flash memory, support 5V±10% voltage, reading, programming, erasing time are 45ns, 8µs, 20 years data retention time, product features include 11 storage blocks, embedded byte/word programming algorithm, embedded multi-block/chip erase algorithm, status register polling and toggle bit, ready/busy output pin, erase suspend and resume mode, unlock bypass programming command, temporary block unprotected mode, low power consumption
Read onlineSTMicroelectronics M29F400B specifications
| Memory capacity | 4 Mbit (512 Kb × 8 or 256 Kb × 16) |
|---|---|
| Supply voltage (program/erase/read) | 5 V ± 10 % |
| Fast access time | 55 ns |
| Programming time (byte) | ≈10 µs per byte |
| Program/Erase endurance | 100 000 cycles per block |
| Data retention | 20 years |
| Input/Output voltage range | -0.6 V to 7 V |
| Ambient operating temperature | -40 °C to 125 °C |
| Storage temperature range | -65 °C to 150 °C |
All STMicroelectronics M29F400B documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What supply voltage is required for programming, erasing and reading the M29F400 devices?
The devices operate with a 5 V supply voltage toleranced at ±10 % for program, erase and read operations.
What is the access time of the M29F400 flash memory?
The flash memory provides a fast access time of 55 ns.