EMX1 / UMX1N / IMX1 is a NPN dual transistor produced by ROHM. It is packaged in an EMT or UMT or SMT package. It has the following features: Two 2SC2412K chips in an EMT or UMT or SMT package, which can be mounted using EMT3 or UMT3 or SMT3 automatic mounting machines. The transistor elements are independent, eliminating mutual interference. Installation cost and area can be halved.
The ROHM EMX1/UMX1N/IMX1 series are general‑purpose dual NPN silicon transistors offered in EMT, UMT and SMT packages. The document lists key features such as independent transistor elements, reduced mounting cost and area, and provides the equivalent circuit.
Detailed specifications cover absolute maximum ratings, external dimensions, electrical characteristics, and packaging information. An appendix notes usage restrictions for high‑reliability applications and export control considerations. This manual is written in Chinese.
| Collector‑base voltage (V_CBO) | 60 V |
|---|---|
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range (Tstg) | -55 °C to +150 °C |
| Power dissipation per element (EMX1) | 120 mW |
| Power dissipation per element (IMX1) | 200 mW |
| Package code (EMX1) | EMT6 |
| Package code (UMX1N) | UMT6 |
| Package code (IMX1) | SMT6 |
The maximum collector‑base voltage is 60 V.
Each EMX1 element may dissipate up to 120 mW.
They can be stored from –55 °C up to +150 °C.