EMT1 / UMT1N / IMT1A Transistors are epitaxial planar type PNP silicon transistors with excellent stability and reliability.
This document provides the specifications for ROHM's EMT1, UMT1N and IMT1A isolated dual PNP transistors. It includes general features, the epitaxial planar structure, and the equivalent circuit model.
Key sections cover absolute maximum voltage ratings, electrical characteristics such as current gain and saturation voltage, mechanical dimensions, package types (EMT6, UMT6, SMT6) and legal notices regarding use and reproduction. This manual is written in Chinese.
| Power dissipation per element | 120 mW |
|---|---|
| Package type (EMT) | EMT6 |
| Package type (UMT) | UMT6 |
| Package type (SMT) | SMT6 |
Each element may dissipate up to 120 mW (200 mW for the UMT/IMT versions).