This document describes the features and dimensions of the general purpose dual transistor products EMT18 / UMT18N / IMT18 produced by ROHM. The product has two 2SA2018 chips and can be mounted using EMT3, UMT3 or SMT3 automatic mounting machines. The transistor elements are independent, eliminating interference. The product has an epitaxial planar type PNP silicon transistor structure.
The EMT18, UMT18N and IMT18 are general‑purpose dual PNP silicon transistors offered by ROHM. They feature two independent transistor elements in a single package, allowing mounting with EMT3, UMT3 or SMT3 automatic machines.
Key specifications include a collector‑base voltage of 15 V, collector‑emitter voltage of 12 V, emitter‑base voltage of –6 V, and a maximum collector current of 500 mA. The devices are supplied in EMT, UMT and SMT package styles conforming to JEDEC SOT‑457, EIAJ SC‑88 and SC‑74 dimensions.
| Collector‑base voltage (Vcbo) | 15 V |
|---|---|
| Collector‑emitter voltage (Vceo) | 12 V |
| Emitter‑base voltage (Vebo) | -6 V |
| Maximum collector current (Ic) | 500 mA |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
The maximum collector current is 500 mA.
Collector‑base voltage 15 V, collector‑emitter voltage 12 V, and emitter‑base voltage -6 V.