This document is the technical information of QFET. It introduces the basic concepts, structure, working principle, applications, and brands and models of QFET.
The FQPF7N20 is a 200 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s proprietary planar stripe, DMOS technology. It offers low gate charge, low output capacitance, fast switching, and high avalanche capability, making it suitable for high‑efficiency DC‑DC converters, switch‑mode power supplies, UPS inverters, and motor‑control applications.
The datasheet lists absolute maximum ratings such as a 200 V drain‑source voltage and ±30 V gate‑source rating, a power dissipation of 37 W at 25 °C, and typical on‑resistance of 0.55 mΩ. Thermal characteristics, detailed electrical parameters, typical characteristic curves, and package dimensions for the TO‑220F package are also provided.
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Gate‑Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) at 25 °C | 37 W |
| On‑Resistance (RDS(on)) typical | 0.55 mΩ |
| Junction‑to‑Case Thermal Resistance | 3.38 °C·W |
| Junction‑to‑Ambient Thermal Resistance | 62.5 °C·W |
| Single Pulsed Avalanche Energy | 73 mJ |
The maximum drain‑source voltage is 200 V.
The typical on‑resistance is about 0.55 mΩ.