This document contains the list of QFET products in Dinghao's inventory, including the product name, brand, and model
The FQPF7N20 is a 200 V N‑Channel enhancement‑mode power MOSFET designed for high‑efficiency switching applications such as DC‑DC converters, switch‑mode power supplies, and motor control. It features low gate charge, low output capacitance, and fast switching performance.
Key specifications include a continuous drain current of 48 A at 25 °C, a pulsed drain current of 19.2 A, a typical on‑resistance of 0.55 mΩ, and a TO‑220F package with detailed thermal resistance values. The device is rated for a gate‑source voltage of ±30 V and includes extensive test data and characteristic curves.
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 48 A |
| Pulsed Drain Current (I_D) (Note 1) | 19.2 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25 °C | 37 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3.38 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| On‑Resistance (R_DS(on)) Typical | 0.55 mΩ |
| Output Capacitance (Coss) Typical | 60 pF |
| Package Type | TO‑220F |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 48 A continuously at a case temperature of 25 °C.
The MOSFET is supplied in a TO‑220F package.
Fairchild does not authorize its use in life‑support devices without written approval.