FQPF6N90 is a 900V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is well suited for high efficiency switch mode power supply.
The FQPF6N90 is a 900 V N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low gate charge, low output capacitance, and fast switching characteristics.
Key specifications include a continuous drain current of 3.4 A (25 °C), pulsed drain current of 13.6 A, typical on‑resistance of 1.92 Ω at Vgs = 10 V, and a total gate charge of about 40 nC. The device can dissipate up to 56 W and features thermal resistances of 2.25 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Typical Gate Charge (Qg) | 40 nC |
The device is rated for a maximum drain‑source voltage of 900 V.
The typical gate charge is about 40 nC.