This document describes the features of the FQPF6N90 N-Channel enhancement mode power field effect transistor, including minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
The FQPF6N90 MOSFET is a 900 V N‑channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, low gate charge, fast switching and 100 % avalanche testing, making it suitable for high‑efficiency switch‑mode power supplies.
The datasheet provides absolute maximum ratings, detailed electrical characteristics (on‑resistance, gate charge, capacitances, switching times), thermal parameters, package dimensions (TO‑220F) and test circuit diagrams. It also includes trademark, disclaimer and product status information.
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 3.4 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| On‑Resistance (RDS(on)) | 1.92 Ω @ VGS=10 V |
| Power Dissipation (PD) @ 25 °C | 56 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.25 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
The device is rated for a maximum drain‑source voltage of 900 V.
It is supplied in a TO‑220F package.
The MOSFET can dissipate up to 56 W at a case temperature of 25 °C.