FQPF6N60 is a 600V N-channel MOSFET with features such as low RDS(on), low gate charge and low Crss, which is suitable for high efficiency switch mode power supplies
The FQPF6N60 is a 600 V N‑Channel enhancement mode power MOSFET designed for high‑efficiency switch‑mode power supplies. It features low gate charge (typical 20 nC), low output capacitance (typical 10 pF), and improved dv/dt capability, making it suitable for fast switching and avalanche‑tested applications.
Key specifications include a continuous drain current of 3.6 A at 25 °C, pulsed drain current of 14.4 A, a gate‑source voltage rating of ±30 V, and a power dissipation of 44 W. The device is supplied in a TO‑220F package with thermal resistance of 2.84 °C/W (junction‑to‑case) and includes detailed electrical, thermal, and switching characteristics for designers.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 3.6 A |
| Pulsed Drain Current (ID) (Note 1) | 14.4 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) at 25 °C | 44 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.84 °C/W |
| Typical Gate Charge (Qg) | 20 nC |
The device is rated for a maximum drain‑source voltage of 600 V.
It can conduct up to 3.6 A continuously at a case temperature of 25 °C.
The MOSFET has a typical gate charge of about 20 nC.
The part is supplied in a TO‑220F package.