FQPF6N60 is a 600V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It offers low on-state resistance, superior switching performance and high energy pulse capability. It is well suited for high efficiency switch mode power supplies.
The FQPF6N60 is a 600 V N‑Channel enhancement‑mode power MOSFET built with Fairchild's planar stripe DMOS technology. It offers low gate charge (≈20 nC), low output capacitance (≈10 pF), and high avalanche capability, making it suitable for high‑efficiency switch‑mode power supplies.
Key specifications include a continuous drain current of 3.6 A at 25 °C, pulsed drain current of 14.4 A, and a maximum power dissipation of 44 W. Thermal resistance values are 2.84 °C/W (junction‑to‑case) and 62.5 °C/W (junction‑to‑ambient). The device is supplied in a TO‑220F package with detailed mechanical dimensions.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 3.6 A |
| Pulsed Drain Current (ID) (Note 1) | 14.4 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) @ 25 °C | 44 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 2.84 °C/W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
| Single Pulse Avalanche Energy | 440 mJ |
| dv/dt (Peak Diode Recovery) | 45 V/µs |
The device is rated for a maximum drain‑source voltage of 600 V.
It can conduct up to 3.6 A continuously at a case temperature of 25 °C.
The MOSFET can dissipate up to 44 W when the case temperature is 25 °C.
Junction‑to‑case resistance is 2.84 °C/W and junction‑to‑ambient resistance is 62.5 °C/W.