FQPF19N10L is an N-channel MOSFET produced by Fairchild Semiconductor. Its maximum voltage is 100V and its typical on-state resistance is 0.1 ohm. It can be used in applications such as high efficiency switching DC/DC converters and DC motor control.
The FQPF19N10L is a 100 V logic‑level N‑Channel MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, fast switching, and high avalanche capability, making it suitable for low‑voltage DC‑DC converters and motor‑control applications.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and test circuit diagrams. Package information for the TO‑220F case and trademark, disclaimer, and product status sections are also included.
| Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 13.6 A |
| Pulsed Drain Current (ID) (Note 1) | 54.4 A |
| Typical Gate Charge (Qg) | 14 nC |
| On‑Resistance (RDS(on)) @ VGS=10 V | 0.12 Ω |
| Maximum Junction Temperature (TJ) | 175 °C |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 3.95 °C/W |
| Package Type | TO‑220F |
The device is rated for a maximum drain‑source voltage of 100 V.
It can handle up to 13.6 A continuous drain current at 25 °C.
The typical gate charge is 14 nC.
The on‑resistance is approximately 0.12 Ω when VGS is 10 V.