FQPF19N10L is a 100V LOGIC N-Channel MOSFET with features such as 13.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V.
The FQPF19N10L is a 100 V N‑Channel enhancement mode MOSFET built with Fairchild's planar stripe DMOS technology. It is designed for low‑voltage applications such as high‑efficiency DC‑DC converters and motor control, offering low on‑state resistance and fast switching.
Key specifications include a continuous drain current of 13.6 A, typical gate charge of 14 nC, Rds(on) of 0.12 Ω at Vgs = 10 V, and a maximum junction temperature of 175 °C. The datasheet also details thermal resistance values, breakdown voltage variation with temperature, and test circuit diagrams for gate charge, resistive switching, and diode recovery.
| Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (Id) at 25 °C | 13.6 A |
| Typical Gate Charge (Qg) | 14 nC |
| On‑Resistance (Rds(on)) | 0.12 Ω @ Vgs = 10 V |
| Thermal Resistance, Junction‑to‑Case | 3.95 °C/W |
| Maximum Junction Temperature | 175 °C |
| Power Dissipation at 25 °C | 38 W |
The device can handle a continuous drain current of 13.6 A at a 25 °C case temperature.
The typical gate charge is 14 nC.
The MOSFET is rated for a maximum junction temperature of 175 °C.