This document describes the features and characteristics of the FQPF12P20 200V P-Channel MOSFET produced by Fairchild Semiconductor International. It uses advanced DMOS technology to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. These devices are well suited for high efficiency switching DC/DC converters.
The Fairchild FQPF12P20 is a 200 V P‑Channel enhancement‑mode power MOSFET built with planar stripe DMOS technology. It offers low on‑resistance, low gate charge and fast switching, making it suitable for high‑efficiency DC‑DC converters.
The datasheet provides absolute maximum ratings, thermal characteristics, electrical parameters, typical performance curves and package dimensions for the TO‑220F case. It also includes trademark, disclaimer and product status information.
| Drain‑Source Voltage (VDS) | -200 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 7.3 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) at 25 °C | 50 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.5 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Typical On‑Resistance (RDS(on)) | 0.47 Ω |
| Typical Gate Charge (Qg) | 31 nC |
| Package Type | TO‑220F |
The FQPF12P20 can withstand a drain‑source voltage of up to –200 V.
It is rated for a continuous drain current of 7.3 A at 25 °C.
The typical gate charge is 31 nC.
The device is supplied in a TO‑220F package.