This is a technical document about FQPF12P20. It introduces the features and characteristics of this product, including on-state resistance, switching performance, avalanche and commutation mode, efficiency, gate charge, Crss, fast switching, avalanche tested, dv/dt capability, etc.
The FQPF12P20 is a P‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse handling, making it suitable for efficient DC/DC converter applications.
Key specifications include a -200 V drain‑source rating, -7.3 A continuous drain current, typical gate charge of 31 nC, on‑resistance around 0.47 Ω, and a power dissipation capability of 50 W. Thermal resistance values are 2.5 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient), with an operating temperature range from –55 °C to +150 °C.
| Drain‑Source Voltage (V_DSS) | -200 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -7.3 A |
| Typical Gate Charge (Qg) | 31 nC |
| Power Dissipation (P_D) at 25 °C | 50 W |
| Thermal Resistance Junction‑to‑Case | 2.5 °C·W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C·W |
| Operating Temperature Range | -55 °C to +150 °C |
The device can handle a continuous drain current of -7.3 A at 25 °C.
The typical gate charge is 31 nC.