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The FQPF12N20 is a 200 V N‑Channel enhancement‑mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology, optimized for low on‑state resistance and fast switching. It is intended for high‑efficiency DC/DC converters, SMPS, UPS, and motor‑control applications.
The datasheet lists absolute maximum ratings, thermal characteristics, electrical parameters, and typical test circuits. Key figures include a continuous drain current of 8.2 A, pulsed rating of 32.8 A, on‑resistance of 0.282 Ω at Vgs = 10 V, and a total gate charge of 18 nC. Package dimensions for the TO‑220F case are also provided.
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 8.2 A |
| Pulsed Drain Current (ID) @ 100 °C | 32.8 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) | 45 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.78 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
The continuous drain current at 25 °C is 8.2 A.
The device can handle a pulsed drain current of 32.8 A.