The document introduces the inventory, technical information, encyclopedia information, and hot news of Dinghao company. It mentions QFET products, and QFET may be the model of the product.
The FQPF12N20 is a 200 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑resistance, low gate charge and fast switching, making it suitable for high‑efficiency DC‑DC converters, SMPS, motor control and UPS applications.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and mechanical dimensions for the TO‑220F package, along with safety and trademark notices.
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 8.2 A |
| Pulsed Drain Current (ID) @ 100 °C | 32.8 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) @ 25 °C | 45 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.78 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| On‑Resistance (RDS(on)) typical | 0.28 Ω @ VGS=10 V |
| Total Gate Charge (Qg) typical | 18 nC |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 8.2 A continuously at a case temperature of 25 °C.
Typical on‑resistance is about 0.28 Ω when VGS = 10 V.
The MOSFET is supplied in a TO‑220F package.