STMICROELECTRONICS Manuals

ULN2001A-ULN2004A is a high voltage, high current darlington array supplied by Dinghao Electronics. The array contains seven open collector darlington pairs with common emitters. Each channel is rated at 500mA and can withstand peak currents of 600mA. The array also includes suppression diodes for driving inductive loads, and the input pins are opposite the output pins to simplify board layout. The array is compatible with all common logic families: ULN2001A General Purpose, DTL, TTL, PMOS, CMOS ULN2002A 14-25V PMOS ULN2003A 5V TTL, CMOS ULN2004A 6-15V CMOS, PMOS. These versatile devices are useful for driving a wide range of loads, including solenoids, relays DC motors, LED displays filament lamps, thermal print- headsand high power buffers.

STP7NB60/FP N-CHANNEL 600V - 1.0 Ω - 7.2A TO-220/TO-220FP PowerMESH™ MOSFET is an advanced family of power MOSFETs with outstanding performances designed by STMicroelectronics. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

This document describes the features and characteristics of an N-channel power MOSFET product, including typical on-resistance, extremely high dv/dt capability, 100% avalanche tested, very low intrinsic capacitances, minimized gate charge, and switching characteristics. The product is suitable for high current, high speed switching, switch mode power supplies, welding equipment, uninterruptible power supplies, and motor drive applications.

This document describes the features and characteristics of STP7NB80 and STP7NB80FP, two N-channel 800V PowerMESH MOSFETs. It includes extremely high dv/dt capability, 100% avalanche tested, very low intrinsic capacitances, and minimized gate charge.

This document describes the features and characteristics of the ST7LITE3 8-bit MCU, released in May 2007. It includes built-in flash, data EEPROM, ADC, timers, SPI, and LINSCI™ features.

The ULN2003A-ULN2004A ULN2001A-ULN2002A are a high voltage, high current darlington arrays each containing seven open collector darlington pairs with common emitters, 500mA per channel, 600mA peak, 50V, integrated suppression diodes, TTL/CMOS/PMOS/DTL compatible inputs, inputs pinned opposite outputs.

ST72104G, ST72215G, ST72216G, ST72254G 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, 16-BIT TIMERS, SPI, I2C INTERFACES

This document describes the features of the LM158-LM258-LM358 LM158A-LM258A-LM358A series low power dual operational amplifiers. These amplifiers have internally frequency compensated, large DC voltage gain, wide bandwidth (unity gain of 1.1mHz), very low supply current (500µA) independent of supply voltage, low input bias current (20nA), low input offset voltage (2mV), low input offset current (2nA), etc. They are suitable for transducer amplifiers, DC gain blocks, and all conventional op-amp circuits, which can be easily implemented in single power supply systems. Additionally, they can be directly supplied with the standard +5V used in logic systems without requiring any additional power supply.

This document describes the features and characteristics of the LM158-LM258-LM358 low power dual operational amplifiers. These op-amps have internally frequency compensated, large DC voltage gain, wide bandwidth, very low supply current, low input bias current and offset voltage, and other features. They are suitable for applications such as transducer amplifiers, DC gain blocks, and other conventional op-amp circuits.

The STP12NK80Z - STB12NK80Z STW12NK80Z is a N-channel 800V - 0.65Ω - 10.5A Zener-protected SuperMESH™ power MOSFET. It features typical RDS(on) = 0.65 Ω, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances and very good manufacturing repeatability. It is suitable for high current, high speed switching and ideal for off-line power supplies.

STP16NK60Z-STB16NK60Z-STW16NK60Z Zener-Protected SuperMESH™ MOSFET is a high voltage MOSFET product from ST. Its typical RDS(on) is 0.38 Ω, which is very suitable for high voltage high frequency switching applications.

STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD is a N-channel 3A-600V PowerMESH™ IGBT from STMicroelectronics. It features high input impedance (voltage driven), low on-voltage drop (Vcesat), low gate charge, high current capability, off losses include tail current, high frequency operation, short circuit rated. It is suitable for motor controls, SMPS and PFC.

The TS3431 is a programmable shunt voltage reference with guaranteed temperature stability over the entire operating temperature range (-40°C to +125°C). The output voltage can be set to any value between 1.24V and 24V with an external resistor bridge. Available in SOT23-3 surface mount package, it can be used in application designs where space saving is critical.

The document introduces the features and characteristics of the N-channel 1000V SuperMESH™ MOSFET series produced by ST. These features include extremely low on-resistance, extremely high dv/dt capability, improved ESD capability, 100% avalanche rated, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability. This series is suitable for high current, high-speed switching, and offline power supply applications.