Key facts
- Brand
- Samsung
- Model
- 128MBIT
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K4S281632M 128Mbit SDRAM Datasheet
The K4S281632M is a 128Mbit CMOS SDRAM organized as 2M × 16‑bit × 4 banks and packaged in a 54‑pin TSOP. It follows JEDEC standards, operates with a 3.3 V LVTTL interface, and supports programmable burst lengths and CAS latencies for high‑performance memory applications.
The datasheet provides absolute maximum ratings, recommended DC and AC operating conditions, pin configurations, timing diagrams, IBIS specifications, and a simplified truth table for command encoding. It is intended for designers integrating the part into memory subsystems.
Samsung 128MBIT specifications
| Capacity | 128 Mbit |
|---|---|
| Organization | 2M × 16 bit × 4 banks |
| Supply voltage (VDD) | 3.0 V – 3.6 V |
| Package | 54‑pin TSOP |
| CAS latency | 2 or 3 |
| Burst length | 1, 2, 4, 8, Full page |
| Operating temperature range | -55 °C – +150 °C |
| Power dissipation | 1 W |
All Samsung 128MBIT documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the recommended supply voltage for the K4S281632M?
The recommended supply voltage is 3.3 V, with a typical range of 3.0 V to 3.6 V.
Which package type does the K4S281632M use?
It is supplied in a 54‑pin TSOP package.
What supply voltage does the K4S281632M require?
It uses a JEDEC‑standard 3.3 V power supply, with a typical range of 3.0 V to 3.6 V.
How many banks are in this SDRAM device?
The device operates with four banks.