The K4S281632M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programma- ble burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high perfor- mance memory system applications.
The K4S281632M is a 128‑Mbit CMOS SDRAM organized as 2M × 16 bit × 4 banks. It operates with a JEDEC‑standard 3.3 V supply and supports LVTTL‑compatible multiplexed addresses. The device offers selectable CAS latencies (2 or 3) and burst lengths ranging from 1 to full page, making it suitable for high‑bandwidth memory applications.
The datasheet provides detailed electrical characteristics, absolute maximum ratings, pin configuration for the 54‑pin TSOP package, and timing parameters for both DC and AC operating conditions. Additional sections cover IBIS specifications, a functional block diagram, and a simplified truth table for command sequencing.
| Capacity | 128 Mbit |
|---|---|
| Organization | 2M × 16 bit × 4 banks |
| Supply Voltage (typical) | 3.3 V (3.0 V – 3.6 V) |
| Maximum Operating Frequency | 125 MHz (CL=3) |
| Package | 54‑pin TSOP |
| Operating Temperature Range | -55 °C to +150 °C |
| Power Dissipation | 1 W |
It uses a JEDEC‑standard 3.3 V power supply, with a typical range of 3.0 V to 3.6 V.
The device operates with four banks.
It is supplied in a 54‑pin TSOP package.
The voltage on any pin relative to Vss must stay between 1.0 V and 4.6 V.