K4S281632M is a 2M x 16Bit x 4 Banks Synchronous DRAM produced by Samsung. It has JEDEC standard 3.3V power supply, LVTTL compatibility and four memory operation functions.
The K4S281632M is a 128Mbit CMOS SDRAM organized as 2M × 16‑bit × 4 banks and packaged in a 54‑pin TSOP. It follows JEDEC standards, operates with a 3.3 V LVTTL interface, and supports programmable burst lengths and CAS latencies for high‑performance memory applications.
The datasheet provides absolute maximum ratings, recommended DC and AC operating conditions, pin configurations, timing diagrams, IBIS specifications, and a simplified truth table for command encoding. It is intended for designers integrating the part into memory subsystems.
| Capacity | 128 Mbit |
|---|---|
| Organization | 2M × 16 bit × 4 banks |
| Supply voltage (VDD) | 3.0 V – 3.6 V |
| Package | 54‑pin TSOP |
| CAS latency | 2 or 3 |
| Burst length | 1, 2, 4, 8, Full page |
| Operating temperature range | -55 °C – +150 °C |
| Power dissipation | 1 W |
The recommended supply voltage is 3.3 V, with a typical range of 3.0 V to 3.6 V.
It is supplied in a 54‑pin TSOP package.
The device supports CAS latency values of 2 or 3.