QFET is one of Dinghao's best-selling products. It has high reliability and performance. This document provides detailed information about QFET.
The Fairchild FQPF7N80 is an N‑Channel enhancement mode power MOSFET designed for high‑efficiency switch‑mode power supplies. It features low gate charge (typical 40 nC), low output capacitance (typical 19 pF), fast switching, and 100 % avalanche testing.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and package dimensions for the TO‑220F package, along with trademark, disclaimer, and product status information.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 3.8 A |
| Pulsed Drain Current (ID) (Note 1) | 15.2 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) at 25 °C | 56 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.25 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Typical Gate Charge (Qg) | 40 nC |
The device is rated for a maximum drain‑source voltage of 800 V.
It can handle a continuous drain current of 3.8 A at 25 °C.
The typical gate charge is 40 nC.
The MOSFET is supplied in a TO‑220F package.