Key facts
- Brand
- Fairchild
- Model
- FQPF5P10
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF5P10 P-Channel MOSFET Datasheet
The FQPF5P10 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage uses such as audio amplifiers, high‑efficiency DC/DC converters, and DC motor control.
Key features include a continuous drain current of 2.9 A, low gate charge (typical 6.3 nC), low output capacitance (≈18 pF), fast switching, 100 % avalanche testing, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and provides a drain‑source voltage rating of –100 V.
Fairchild FQPF5P10 specifications
| Drain-Source Voltage (Vds) | -100 V |
|---|---|
| Gate-Source Voltage (Vgs) | +30 V |
| Power Dissipation (Pd) at 25 °C | 23 W |
| Typical Gate Charge (Qg) | 6.3 nC |
| Package | TO‑220F |
All Fairchild FQPF5P10 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the gate‑source voltage rating?
The maximum gate‑source voltage is +30 V.
What package does the FQPF5P10 use?
It is supplied in a TO‑220F package.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of -100 V.
What is the continuous drain current at 25 °C?
The continuous drain current at 25 °C is 2.9 A.