FQPF5P10 is a 100V P-channel MOSFET produced by Fairchild. Its features are low on-state resistance, superior switching performance, and the ability to withstand high energy pulses in the avalanche and commutation mode. It is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters and DC motor control.
The FQPF5P10 is a 100 V P‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, low gate charge, fast switching and high avalanche capability, making it suitable for low‑voltage applications such as audio amplifiers, DC‑DC converters and motor control.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and mechanical dimensions for the TO‑220F package. It also includes trademark, disclaimer, and product status information from Fairchild Semiconductor.
| Drain‑Source Voltage (VDS) | -100 V |
|---|---|
| Continuous Drain Current (25 °C) | 2.9 A |
| Pulsed Drain Current | 11.6 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (25 °C) | 23 W |
| Junction‑to‑Case Thermal Resistance | 6.52 °C·W |
| Junction‑to‑Ambient Thermal Resistance | 62.5 °C·W |
| Maximum Junction Temperature | 175 °C |
| Maximum Lead Temperature for Soldering | 300 °C |
The device is rated for a maximum drain‑source voltage of -100 V.
The continuous drain current at 25 °C is 2.9 A.
The gate‑source voltage limit is +30 V.
The maximum power dissipation at 25 °C is 23 W.