Key facts
- Brand
- Fairchild
- Model
- FQPF5N80
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF5N80 Datasheet
The FQPF5N80 is an N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology, optimized for low on‑state resistance, fast switching, and high‑energy avalanche capability. It is intended for high‑efficiency switch‑mode power supplies and other demanding applications.
The document lists absolute maximum ratings, detailed electrical characteristics such as drain‑source voltage, continuous and pulsed drain current, gate charge, and capacitances, as well as thermal resistance values and package dimensions for the TO‑220F case. Test circuits for gate charge, resistive switching, inductive switching, and diode recovery are also included.
Fairchild FQPF5N80 specifications
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 28 A |
| Typical Gate Charge (Qg) | 25 nC |
| Power Dissipation (PD) at 25 °C | 47 W |
Source: Fairchild FQPF5N80 Datasheet
All Fairchild FQPF5N80 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 800 V.
What is the continuous drain current at 25 °C?
The continuous drain current is 28 A at a case temperature of 25 °C.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 800 V.
What is the typical gate charge of the FQPF5N80?
The typical gate charge is 25 nC.