The FQPF5P10 is a 100V P-channel MOSFET produced by Fairchild. It features low gate charge, low reverse leakage current and fast switching characteristics, and is suitable for low-voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.
The FQPF5P10 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage uses such as audio amplifiers, high‑efficiency DC/DC converters, and DC motor control.
Key features include a continuous drain current of 2.9 A, low gate charge (typical 6.3 nC), low output capacitance (≈18 pF), fast switching, 100 % avalanche testing, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and provides a drain‑source voltage rating of –100 V.
| Drain-Source Voltage (Vds) | -100 V |
|---|---|
| Gate-Source Voltage (Vgs) | +30 V |
| Power Dissipation (Pd) at 25 °C | 23 W |
| Typical Gate Charge (Qg) | 6.3 nC |
| Package | TO‑220F |
The maximum gate‑source voltage is +30 V.
It is supplied in a TO‑220F package.