FQPF5N80 800V N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor International. It uses Fairchild's proprietary planar stripe DMOS technology, which has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
The FQPF5N80 is an N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology, optimized for low on‑state resistance, fast switching, and high‑energy avalanche capability. It is intended for high‑efficiency switch‑mode power supplies and other demanding applications.
The document lists absolute maximum ratings, detailed electrical characteristics such as drain‑source voltage, continuous and pulsed drain current, gate charge, and capacitances, as well as thermal resistance values and package dimensions for the TO‑220F case. Test circuits for gate charge, resistive switching, inductive switching, and diode recovery are also included.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 28 A |
| Typical Gate Charge (Qg) | 25 nC |
| Power Dissipation (PD) at 25 °C | 47 W |
The device is rated for a maximum drain‑source voltage of 800 V.
The continuous drain current is 28 A at a case temperature of 25 °C.
Typical gate charge is 25 nC.
The MOSFET can dissipate up to 47 W at a case temperature of 25 °C.