FQPF5N80 is an N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance, and the ability to withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
The Fairchild FQPF5N80 is an N‑Channel enhancement mode power MOSFET built with planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching and robust avalanche capability.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, package dimensions and test circuit examples, along with trademark and disclaimer information.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 28 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) @ 25 °C | 47 W |
| Thermal Resistance Junction‑to‑Case (RJC) | 2.66 °C·W |
| Thermal Resistance Junction‑to‑Ambient (RJA) | 62.5 °C·W |
| Typical Gate Charge (Qg) | 25 nC |
| Typical Output Capacitance (Coss) | 95 pF |
The device is rated for a maximum drain‑source voltage of 800 V.
The typical gate charge is 25 nC.
Yes, it is 100 % avalanche tested.
The continuous drain current at 25 °C is 28 A.