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The FQPF19N20 MOSFET is an N‑Channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC‑DC converters, SMPS, motor control and UPS systems, offering low on‑state resistance and robust avalanche capability.
Key specifications include a 200 V drain‑source rating, 11.8 A continuous drain current at 25 °C, 48 A pulsed current, 0.152 Ω typical Rds(on) at Vgs = 10 V, and a low gate charge of 31 nC. Thermal performance features a 2.5 °C/W junction‑to‑case resistance and a 50 W power dissipation rating.
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 11.8 A |
| Pulsed Drain Current (Id) (Note 1) | 48 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (Rds(on)) @ Vgs=10 V | 0.152 Ω |
| Typical Gate Charge (Qg) | 31 nC |
| Input Capacitance (Ciss) typ | 1220 pF |
| Output Capacitance (Coss) typ | 220 pF |
| Power Dissipation (Pd) @ 25 °C | 50 W |
| Thermal Resistance Junction‑to‑Case | 2.5 °C/W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C/W |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 11.8 A continuously at a case temperature of 25 °C.
The typical gate charge is 31 nC.
The on‑resistance is typically 0.152 Ω at a gate voltage of 10 V.