FQPF12N60 is a high efficiency switch mode power supply using Fairchild's proprietary planar stripe DMOS technology, which has low on-state resistance, superior switching performance and high energy pulse endurance.
The FQPF12N60 is a 600 V N‑Channel enhancement‑mode power MOSFET designed for high‑efficiency switch‑mode power supplies. It features low gate charge (typical 42 nC), low output capacitance (typical 25 pF), and 100 % avalanche testing for robust operation.
The datasheet provides absolute maximum ratings, thermal characteristics, electrical parameters, and typical performance curves. The device is supplied in a TO‑220F package and includes specifications such as a continuous drain current of 5.8 A at 25 °C, a pulsed drain current of 23 A, and a power dissipation rating of 55 W.
| Drain‑Source Voltage (V_DSS) | 600 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 5.8 A |
| Continuous Drain Current (I_D) @ 100 °C | 3.7 A |
| Pulsed Drain Current (I_Dp) | 23 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25 °C | 55 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.27 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
| Total Gate Charge (Q_g) | 42 nC (typical) |
| Reverse Transfer Capacitance (Crss) | 25 pF (typical) |
| Package Type | TO‑220F |
The device can conduct a continuous drain current of 5.8 A at 25 °C (3.7 A at 100 °C).
The FQPF12N60 is supplied in a TO‑220F package.
The typical total gate charge is 42 nC.
The drain‑source breakdown voltage is rated at 600 V.