This document describes the features and characteristics of the 2.5V drive Nch MOSFET QS8K2 produced by ROHM, including low on-resistance, high power package, and 2.5V drive.
The QS8K2 is a 2.5 V drive N‑channel MOSFET with low on‑resistance and a high‑power package. Key features include a low RDS(on), 2.5 V gate drive capability, and suitability for switching applications.
The sheet lists absolute maximum ratings, thermal resistance, and detailed electrical characteristics such as drain‑source voltage, continuous drain current, and power dissipation. It also includes typical application circuits, measurement setups, and body‑diode parameters for designers.
| Drain‑source voltage (VDS) max | 30 V |
|---|---|
| Gate‑source voltage (VGS) max | 12 V |
| Continuous drain current (ID) max | 13.5 A |
| Power dissipation (PD) max | 15 W total |
| Maximum channel temperature (TCH) | 150 °C |
The QS8K2 can withstand up to 30 V between drain and source.
The device is rated for a continuous drain current of 13.5 A.
A gate‑source voltage of up to 12 V is specified as the maximum rating.
The MOSFET can dissipate up to 15 W total.