QS8K21 is a low-on-resistance, high-power package, low-voltage drive Nch + Nch MOSFET from ROHM, suitable for switching applications.
The QS8K21 is a low‑on‑resistance, 4 V‑drive N‑channel MOSFET offered in a high‑power TSMT8 package. It is intended for switching applications in general‑purpose electronic equipment such as audio‑visual, office, and communication devices.
The datasheet lists key specifications including a 45 V drain‑source rating, 4 A continuous drain current, 15 W power dissipation, and a storage temperature range of –55 °C to +150 °C. Application circuits, measurement methods, and packaging details are also provided.
| Drain‑source voltage (VDS) | 45 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 4 A |
| Pulsed drain current (ID,pulse) | 12 A |
| Power dissipation | 15 W |
| Thermal resistance (RθJA) | 83.3 °C/W |
| Storage temperature range | -55 °C to +150 °C |
| Package type | TSMT8 |
The QS8K21 can withstand up to 45 V drain‑source voltage.
It is rated for a continuous drain current of 4 A.
The device is offered in a TSMT8 (high‑power) package.
It can be stored from –55 °C up to +150 °C.