Datasheet
This document is the datasheet of the 32K x 8 Radiation Hardened ROM. It is fabricated with Honeywell's advanced radiation hardening technology and has the characteristics of high performance, high reliability, low power consumption, etc. It is suitable for use in systems operating in radiation environments.
Datasheet
32K x 8 High Performance Radiation Hardened ROM is an industry standard functionality 32768 word x 8-bit read only memory. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments. The ROM operates over the full military temperature range and re- quires only a single 5 V ± 10% power supply. The ROM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The ROM operation is fully asynchronous, with an associated typical access time of 14 ns. Honeywell’s enhanced SOI RICMOS™IV (Radiation Insen- sitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout, and pro- cess hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µm effective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP pla- narization process, and a lightly doped drain (LDD) struc- ture for improved short channel reliability.
