Honeywell HX6656 Manuals

ManualLib has 3 documents for the Honeywell HX6656: 2 datasheets. Every file can be read online or downloaded as a PDF for free.

Datasheet 2

Key facts

Model
HX6656
Industry
Industrial
Documents
3
Languages
EN
Last added
2012-06-11

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Honeywell HX6656 32K x 8 ROM Datasheet

Honeywell HX6656 32K x 8 ROM Datasheet

Datasheet 13 pages · 153 KB · EN

The Honeywell HX6656 is a high-performance 32,768 word by 8-bit read-only memory (ROM) designed for use in systems operating in radiation environments. It is fabricated using Honeywell's RICMOS IV Silicon on Insulator (SOI) technology to ensure total dose hardness through 1x10^9 rad(SiO2), dynamic and static transient upset hardness, and neutron hardness.

The device operates over a full military temperature range of -55°C to +125°C with a single 5V power supply. It supports both TTL and CMOS compatible I/O levels and offers asynchronous operation with typical read cycle times under 17 ns. The HX6656 is available in 28-lead Flat Pack, 36-lead Flat Pack, and 28-Lead DIP packages.

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Honeywell HX6656 specifications

Memory Size32K x 8 (32,768 words x 8-bit)
Total Dose Hardness1x10^9 rad(SiO2)
Transient Upset Hardness1x10^8 rad(Si)/s
Neutron Hardness1x10^9 n/cm2
Operating Temperature Range-55°C to +125°C
Supply VoltageSingle 5 V +/- 10%
Typical Read Cycle Time< 17 ns

Source: Honeywell HX6656 32K x 8 ROM Datasheet

All Honeywell HX6656 documents by type

Datasheet 2

Ratings, dimensions and ordering codes, for selection and design work.

Questions answered in these manuals

What is the memory capacity of the HX6656?

The device contains a high-performance 32,768 word x 8-bit read-only memory.

From: Honeywell HX6656 32K x 8 ROM Datasheet

Is the HX6656 immune to latchup?

Yes, the ROM will not latch up due to any of the specified radiation exposure conditions.

From: Honeywell HX6656 32K x 8 ROM Datasheet

What is the typical access time of the HX6656?

The typical read cycle time is less than 17 ns.

From: Honeywell HX66656 Manual

Is the device immune to single-event upsets?

Yes, all storage elements within the ROM are immune to single event upsets for LET >= 90 MeV/cm/mg.

From: Honeywell HX66656 Manual

Is the HX6656 immune to single event upsets?

Yes, all storage elements within the ROM are immune to single event upsets for LET >= 190 MeV/cm/mg^2.

From: Honeywell HX6656 Data Sheet1

What is the typical read cycle time?

The typical read cycle time is less than 17 ns.

From: Honeywell HX6656 Data Sheet1