32K x 8 High Performance Radiation Hardened ROM is an industry standard functionality 32768 word x 8-bit read only memory. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments. The ROM operates over the full military temperature range and re- quires only a single 5 V ± 10% power supply. The ROM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The ROM operation is fully asynchronous, with an associated typical access time of 14 ns. Honeywell’s enhanced SOI RICMOS™IV (Radiation Insen- sitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout, and pro- cess hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µm effective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP pla- narization process, and a lightly doped drain (LDD) struc- ture for improved short channel reliability.
The Honeywell HX6656 is a high-performance 32,768 word x 8-bit read-only memory (ROM) fabricated using RICMOS IV Silicon on Insulator (SOI) technology. It is specifically engineered to operate in radiation environments, offering total dose hardness up to 1x10^9 rad(SiO2), dynamic and static transient upset hardness through 1x10^8 rad(Si)/s, and neutron hardness through 1x10^12 n/cm^2. The device is SEU immune and latchup free.
| Memory Size | 32K x 8 (32,768 words x 8-bit) |
|---|---|
| Process Technology | RICMOS IV Silicon on Insulator (SOI) 0.75 um Process |
| Total Dose Hardness | 1x10^9 rad(SiO2) |
| Transient Upset Hardness | 1x10^8 rad(Si)/s |
| Neutron Hardness | 1x10^12 n/cm^2 |
| Operating Voltage | 5 V + 10% |
| Typical Operating Power | <15 mW/MHz |
| Operating Temperature Range | -55°C to 125°C |
Yes, all storage elements within the ROM are immune to single event upsets for LET >= 190 MeV/cm/mg^2.
The typical read cycle time is less than 17 ns.
Yes, it features CMOS or TTL Compatible I/O.