This document is the datasheet of the 32K x 8 Radiation Hardened ROM. It is fabricated with Honeywell's advanced radiation hardening technology and has the characteristics of high performance, high reliability, low power consumption, etc. It is suitable for use in systems operating in radiation environments.
The Honeywell HX6656 is a high-performance 32,768 word by 8-bit read-only memory (ROM) designed for use in systems operating in radiation environments. It is fabricated using Honeywell's RICMOS IV Silicon on Insulator (SOI) technology to ensure total dose hardness through 1x10^9 rad(SiO2), dynamic and static transient upset hardness, and neutron hardness.
The device operates over a full military temperature range of -55°C to +125°C with a single 5V power supply. It supports both TTL and CMOS compatible I/O levels and offers asynchronous operation with typical read cycle times under 17 ns. The HX6656 is available in 28-lead Flat Pack, 36-lead Flat Pack, and 28-Lead DIP packages.
| Memory Size | 32K x 8 (32,768 words x 8-bit) |
|---|---|
| Total Dose Hardness | 1x10^9 rad(SiO2) |
| Transient Upset Hardness | 1x10^8 rad(Si)/s |
| Neutron Hardness | 1x10^9 n/cm2 |
| Operating Temperature Range | -55°C to +125°C |
| Supply Voltage | Single 5 V +/- 10% |
| Typical Read Cycle Time | < 17 ns |
The device contains a high-performance 32,768 word x 8-bit read-only memory.
Yes, the ROM will not latch up due to any of the specified radiation exposure conditions.
The device is available in 28-Lead Flat Pack, 36-Lead Flat Pack, and 28-Lead DIP packages.