32Kx8 Radiation Hardened ROM is a high performance 32768 word x 8-bit read only memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments. The ROM operates over the full military temperature range and re- quires only a single 5 V ± 10% power supply. The ROM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The ROM operation is fully asynchronous, with an associated typical access time of 14 ns. Honeywell’s enhanced SOI RICMOS™IV (Radiation Insen- sitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout, and pro- cess hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µm effective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP pla- narization process, and a lightly doped drain (LDD) struc- ture for improved short channel reliability.
The document describes the Honeywell HX6656, a high-performance 32,768 word x 8-bit read-only memory (ROM) fabricated using Honeywell's RICMOS IV Silicon on Insulator (SOI) technology. It is specifically designed for systems operating in radiation environments, offering total dose hardness through 1x10^9 rad(SiO2) and immunity to single-event upsets.
| Memory Size | 32K x 8 |
|---|---|
| Total Dose Hardness | 1x10^9 rad(SiO2) |
| Operating Voltage | 5 V + 10% |
| Temperature Range | -55°C to 125°C |
| Typical Access Time | < 17 ns |
The typical read cycle time is less than 17 ns.
Yes, all storage elements within the ROM are immune to single event upsets for LET >= 90 MeV/cm/mg.