FQP9N50C/FQPF9N50C QFET 500V N-Channel MOSFET is a N-Channel enhancement mode power field effect transistor produced by Fairchild Corporation using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
The Fairchild FQP9N50C and FQPF9N50C are 500 V N‑Channel enhancement‑mode power MOSFETs built with DMOS technology. The document provides a general description, key features such as low gate charge (typical 28 nC) and low output capacitance, and detailed electrical and thermal specifications.
Included are absolute maximum ratings, typical on‑state characteristics, switching performance data, and mechanical dimensions for the TO‑220 and TO‑220F packages. Trademark, disclaimer, and product status information are also listed.
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Gate‑Source Voltage | +30 V |
| Typical Gate Charge | 28 nC |
| Typical Reverse Transfer Capacitance (Crss) | 24 pF |
The typical gate charge is 28 nC.
The single‑pulse avalanche energy is rated at 360 mJ.