This document introduces the Toshiba MT3S14FS silicon NPN transistor, released on August 20, 2010. The transistor is suitable for low voltage operation and low noise amplification in the UHF to VHF frequency range, particularly for buffer applications. Its excellent noise characteristics of 1.7 dB NF and 7 dB |S21e|2 (f=2 GHz) make it ideal for low noise amplification.
The MT3S14FS is a silicon NPN epitaxial planar transistor designed for low‑voltage UHF/VHF operation with low noise. The document lists absolute maximum ratings, electrical characteristics such as collector‑base voltage, collector current, and transition frequency, as well as microwave performance parameters.
The datasheet also includes handling precautions, reliability notes, and legal usage restrictions, emphasizing static‑discharge protection and advising against use in safety‑critical or military applications. Users are directed to consult Toshiba’s reliability handbooks for detailed design guidance. This manual is written in Japanese.
| Noise figure (NF) | 1.7 dB |
|---|---|
| Maximum collector current (Ic) | 30 mA |
| Maximum base current (Ib) | 10 mA |
| Collector‑emitter voltage (VcEo) | 2.5 V |
| Storage temperature range | -55 °C to 125 °C |
The maximum collector current is 30 mA.
The device is rated for storage temperatures from –55 °C to 125 °C.
The noise figure is 1.7 dB.