This document describes a TOSHIBA silicon NPN epitaxial planar transistor called MT3S14FS, which is suitable for low-noise amplifier and buffer applications in the VHF~UHF frequency range. The product exhibits superior performance in buffer applications and has excellent noise characteristics: NF = 1.7dB, |S21e|2 = 7dB (f = 2 GHz).
The MT3S14FS is a silicon NPN epitaxial planar transistor designed for VHF‑UHF low‑noise amplifier and buffer applications. It offers low noise figure and good gain performance up to several gigahertz.
The document lists absolute maximum ratings, microwave and DC electrical characteristics, and important handling precautions such as ESD sensitivity. It also includes marking information and restrictions on product use for safety and regulatory compliance.
| Collector‑Base Voltage (VcBO) | 6 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | 25 V |
| Emitter‑Base Voltage (VEB0) | 1.5 V |
| Collector Current (Ic) | 30 mA |
| Base Current (Ib) | 10 mA |
| Weight | 0.6 mg (typ) |
The maximum collector current is 30 mA.
The device is sensitive to electrostatic discharge; tools and equipment must be grounded and antistatic measures used when handling.