This document is the datasheet of K9F2808U0C, introducing the brand, model, features and characteristics of this product.
The K9F2808U0C is a 128‑Mbit NAND flash memory (138,412,032 bits) organized as 32,768 pages of 528 bytes each, with an additional 4 Mbit spare area. It is offered in 2.7 V–3.6 V operation and features fast program (≈200 µs) and erase (≈2 ms) times, 100 k program/erase cycles endurance, and 10‑year data retention.
The datasheet details package options (48‑pin TSOP1 and WSOP1), pin functions, command sets, and power‑up protection. It also includes electrical characteristics such as Ready/Busy voltage levels and guidance for pull‑up resistor selection.
| Memory Capacity | 128 Mbit (plus 4 Mbit spare) |
|---|---|
| Operating Voltage | 2.7 V – 3.6 V |
| Typical Program Time | 200 µs |
| Typical Block Erase Time | 2 ms |
| Endurance | 100 k program/erase cycles |
| Data Retention | 10 years |
| Page Size | 528 bytes (512 + 16) |
| Block Size | 16 K + 512 bytes |
| Ready/Busy Voltage Levels | VIL 0.4 V, VOH 2.4 V |
The device operates from 2.7 V to 3.6 V.
It is rated for 100 k program/erase cycles.
Typical program time is about 200 µs.
R/B is an open‑drain output that stays high when idle, goes low during program, erase or random read, and returns high when the operation completes.