This datasheet is about SAMSUNG K9F2816U0C-YCB0,YIB0 FLASH MEMORY's specifications parameters table, including product name, model, package, pin assignment, interface, supplier, supplier link, pin function, package size, package volume, package material, typical value, maximum value, minimum value, remark and other information
The K9F2808U0C is a 16‑Mbit x 8‑bit (or 8‑Mbit x 16‑bit) NAND flash memory offered in 1.8 V and 3.3 V versions. It features fast write cycles, high endurance, and data retention suitable for solid‑state storage applications.
The datasheet details package options (48‑pin TSOP, 48‑pin WSOP, 63‑ball TBGA), pin assignments, timing parameters, power‑up protection, and ready/busy behavior, enabling designers to integrate the device into a wide range of electronic products.
| Voltage Supply (1.8 V device) | 1.7 V ~ 1.95 V |
|---|---|
| Organization (X8) | (16M + 512K) bit × 8 bit |
| Organization (X16) | (8M + 256K) bit × 16 bit |
| Program Time (typical) | 200 µs |
| Block Erase Time (typical) | 2 ms |
| Endurance | 100 K program/erase cycles |
| Data Retention | 10 years |
| Package (48‑pin TSOP) | 12 mm × 20 mm, 0.5 mm pitch |
| Package (63‑ball TBGA) | 9 mm × 11 mm, 0.8 mm pitch |
The typical program time is 200 µs per page.
The 1.8 V version operates from 1.7 V to 1.95 V.
It is rated for 100 000 program/erase cycles.