128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Datasheet
This handbook provides detailed technical information for Samsung K9F1G08, K9F1G16 NAND flash memory devices in 1.8 V, 2.65 V and 3.3 V versions. It includes revision history, product listings, electrical specifications, pin‑out diagrams for TSOP1 and WSOP1 packages, functional block diagrams, and data‑protection guidelines.
The document is intended for hardware designers and system integrators who need precise timing parameters, voltage ranges, endurance data, and package dimensions to correctly integrate these NAND flash chips into storage solutions and embedded applications.
| Voltage Supply (1.8 V device) | 1.70 V ~ 1.95 V |
|---|---|
| Voltage Supply (2.65 V device) | 2.4 V ~ 2.9 V |
| Voltage Supply (3.3 V device) | 2.7 V ~ 3.6 V |
| Program time (typical) | 300 µs |
| Block erase time (typical) | 2 ms |
| tWC (min) | 45 ns |
| tRP (min) | 25 ns |
| Endurance | 100 K program/erase cycles |
| Data retention | 10 years |
| Package type (TSOP1) | 48‑pin TSOP1, 12 × 20 mm, 0.5 mm pitch |
A recovery time of at least 10 µs is required before the internal circuit is ready for any command sequences.
Typical program time is 300 µs and typical block erase time is 2 ms.
It is offered in a 48‑pin TSOP1 package (12 × 20 mm, 0.5 mm pitch) and a Pb‑free version.