Samsung K7N163601A 512Kx36 Pipelined SRAM Datasheet

512Kx36 & 1Mx18 Pipelined NtRAMTM Datasheet

Brand: Samsung
Category: Memory
Document type: Datasheet
Language: English
Pages: 24
File format: PDF
File size: 284 KB
Published: 08 June, 2012
Updated: 30 September, 2023
Model: K7N163601A
MD5 checksum: 24ADED7023F6D38A540C8E2166204AE8
PDF: Samsung K7N163601A 512Kx36 Pipelined SRAM Datasheet PDF

About this manual

This document is a technical datasheet for the Samsung K7N163601A and K7N161801A, which are 512Kx36-bit and 1Mx18-bit pipelined NtRAM (No Turnaround Random Access Memory) devices. These synchronous static SRAMs utilize high-performance CMOS technology and feature byte-writable functions, self-timed write cycles, and support for both commercial and industrial temperature ranges.

What's inside

Ordering Information
Features
Pin Configuration
Logic Block Diagram
General Description
AC Parameters

Specifications

Power Supply Voltage (VDD)	3.3V +/- 0.165V
I/O Voltage (3.3V I/O)	3.3V +/- 0.165V
I/O Voltage (2.5V I/O)	2.5V +/- 0.4V/-0.125V
Package Types	100-TQFP and 165FBGA
Operating Temperature Ranges	Commercial and Industrial

Frequently asked questions

What is the full name of the memory technology used?

The device uses NtRAM, which stands for No Turnaround Random Access Memory.

How does the write cycle operate?

Write cycles are internally self-timed and initiated by the rising edge of the clock input.

What is the function of the ZZ pin?

The ZZ pin serves as an asynchronous input to enable power sleep mode.

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